Chemical vapor deposition and morphology problems

A model for chemical vapor deposition (CVD) at or near atmospheric pressure is presented. A linear stability analysis of planar growth is presented an d a dispersion relation is derived that relates species transport, surface diffusion, surface tension and geometrical factors with the growth of pertu rbations. Severe fingering requires a description with are-length as the in dependent variable. The finite element method is described to solve the evo lution of the interface and of the gas-phase species concentration directly above the interface. Some examples are also given. (C) 2000 Published by E lsevier Science S.A. All rights reserved.