Modeling and simulation of plasma etching reactors for microelectronics

Authors
Citation
Dj. Economou, Modeling and simulation of plasma etching reactors for microelectronics, THIN SOL FI, 365(2), 2000, pp. 348-367
Citations number
140
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
365
Issue
2
Year of publication
2000
Pages
348 - 367
Database
ISI
SICI code
0040-6090(20000417)365:2<348:MASOPE>2.0.ZU;2-9
Abstract
As microelectronic devices continue to shrink and process requirements beco me ever more stringent, plasma modeling and simulation becomes increasingly more attractive as a tool for design, control, and optimization of plasma reactors. A brief introduction and overview of the plasma reactor modeling and simulation problem is presented in this paper. The problem is broken do wn into smaller pieces (reactor, sheath. microfeature. and crystal lattice) to address the disparity in length scales. A modular approach also helps t o resolve the issue of disparity in time scales. (C) 2000 Elsevier Science S.A. All rights reserved.