Rc. Hugo et Rg. Hoagland, The kinetics of gallium penetration into aluminum grain boundaries - In situ TEM observations and atomistic models, ACT MATER, 48(8), 2000, pp. 1949-1957
The penetration behavior of gallium into aluminum grain boundaries was comp
ared with Al grain boundary properties estimated from atomistic computer mo
dels. Penetration speeds in individual grain boundaries were measured in si
tu in the transmission electron microscope (TEM), and the observed Al grain
boundaries were simulated using the embedded atom method (EAM). Penetratio
n speeds were relatively slow in low angle grain boundaries and most low Si
gma boundaries; however, for high Sigma boundaries, penetration speeds vari
ed widely and were not correlated with rotation angle or coincidence site l
attice (CSL) Sigma value. Atomistic computer models suggested that the pres
ence of structural barriers in the grain boundary plane was an important fa
ctor in determining penetration speeds. (C) 2000 Acta Metallurgica Inc. Pub
lished by Elsevier Science Ltd AII rights reserved.