The kinetics of gallium penetration into aluminum grain boundaries - In situ TEM observations and atomistic models

Citation
Rc. Hugo et Rg. Hoagland, The kinetics of gallium penetration into aluminum grain boundaries - In situ TEM observations and atomistic models, ACT MATER, 48(8), 2000, pp. 1949-1957
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science",Metallurgy
Journal title
ACTA MATERIALIA
ISSN journal
13596454 → ACNP
Volume
48
Issue
8
Year of publication
2000
Pages
1949 - 1957
Database
ISI
SICI code
1359-6454(20000511)48:8<1949:TKOGPI>2.0.ZU;2-S
Abstract
The penetration behavior of gallium into aluminum grain boundaries was comp ared with Al grain boundary properties estimated from atomistic computer mo dels. Penetration speeds in individual grain boundaries were measured in si tu in the transmission electron microscope (TEM), and the observed Al grain boundaries were simulated using the embedded atom method (EAM). Penetratio n speeds were relatively slow in low angle grain boundaries and most low Si gma boundaries; however, for high Sigma boundaries, penetration speeds vari ed widely and were not correlated with rotation angle or coincidence site l attice (CSL) Sigma value. Atomistic computer models suggested that the pres ence of structural barriers in the grain boundary plane was an important fa ctor in determining penetration speeds. (C) 2000 Acta Metallurgica Inc. Pub lished by Elsevier Science Ltd AII rights reserved.