Structure and ferroelectricity of Ba0.8Sr0.2TiO3 thin films prepared by a modified sol-gel processing

Citation
Jg. Cheng et al., Structure and ferroelectricity of Ba0.8Sr0.2TiO3 thin films prepared by a modified sol-gel processing, ACT PHY C E, 49(5), 2000, pp. 1006-1009
Citations number
16
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA
ISSN journal
10003290 → ACNP
Volume
49
Issue
5
Year of publication
2000
Pages
1006 - 1009
Database
ISI
SICI code
1000-3290(200005)49:5<1006:SAFOBT>2.0.ZU;2-T
Abstract
Quality Ba0.8Sr0.2TiO3 (BST) thin films with a remnant polarization of abou t 3.5 mu C/cm(2), and a coercive field of about 53 kV/cm have been successf ully prepared by a sol-gel processing using a 0.05 mol/L precursor solution . X-ray diffraction and field emission scanning electron microscope investi gations show that the BST films exhibit a tetragonal structure (c/a = 1.009 ) and consist dominantly of large columnar grains of about 150 nm in diamet er. The observed good ferroelectricity and insulating property render the s ol-gel derived BST thin films promising for uncooled infrared detector and thermal imaging applications.