Highly anisotropically self-assembled structures of para-sexiphenyl grown by hot-wall epitaxy

Citation
A. Andreev et al., Highly anisotropically self-assembled structures of para-sexiphenyl grown by hot-wall epitaxy, ADVAN MATER, 12(9), 2000, pp. 629
Citations number
29
Categorie Soggetti
Multidisciplinary,"Material Science & Engineering
Journal title
ADVANCED MATERIALS
ISSN journal
09359648 → ACNP
Volume
12
Issue
9
Year of publication
2000
Database
ISI
SICI code
0935-9648(20000503)12:9<629:HASSOP>2.0.ZU;2-I
Abstract
Communication: Highly anisotropic films of needle-like crystalline para-sex iphenyl (PSP)-a promising candidate for the electroactive layer in organic light-emitting diodes (LEDs)-can be produced using hot-wall epitaxy, as dem onstrated here (see Figure). Optical dichroic ratios of approximate to 11 i n absorption and up to 14 in emission are measured, which is of great signi ficance for the development of polarized LEDs.