Semiconductor photocatalytic processes have been studied for nearly 20 year
s dire to their intriguing advantages in environmental remediation. A ratio
nal approach in determining the effect of mass transfer and catalyst layer
thickness during photocatalytic reactions is proposed. The reaction occurs
at the liquid-catalyst interface, and therefore when the catalyst is immobi
lized, both external and internal mass transfer plays significant roles in
overall photocatalytic processes. Several model parameters-external mass-tr
ansfer coefficient dynamic adsorption equilibrium constant adsorption rate
constant, internal mass-transfer coefficient, and effective diffusivity-wer
e determined either experimentally or by fitting realistic models to experi
mental results using benzoic acid as a model component. Even though all the
se parameters are critical to the design and development of photocatalytic
processes, they are not available in the literature. The effect of the inte
rnal mass transfer on the photocatalytic degradation rate over different ca
talyst layer thicknesses under two different operating configurations was a
nalyzed theoretically and experimentally verified. It was observed that an
optimal catalyst layer thickness exists for substrate-to-catalyst illuminat
ion.