Dynamics of carriers in resonantly excited quantum-well lasers studied by intersubband absorption

Citation
I. Shtrichman et al., Dynamics of carriers in resonantly excited quantum-well lasers studied by intersubband absorption, APPL PHYS L, 76(21), 2000, pp. 2988-2990
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
21
Year of publication
2000
Pages
2988 - 2990
Database
ISI
SICI code
0003-6951(20000522)76:21<2988:DOCIRE>2.0.ZU;2-K
Abstract
Using infrared picosecond pulses to probe the intersubband absorption of Ga As/AlGaAs quantum-well lasers following their optical excitation, we direct ly measure the dynamics of carriers in these devices. We find no evidence f or excitonic gain even at cryogenic temperatures and resonant excitonic exc itation. (C) 2000 American Institute of Physics. [S0003-6951(00)05221-9].