Silicon nanowires grown on iron-patterned silicon substrates

This letter reports the synthesis of silicon nanowires on iron-patterned si licon substrates in a controlled fashion using a method involving thermal e vaporation of pure silicon powder. The positions of these silicon nanowires were controlled by depositing iron in desired areas on the substrates. Tra nsmission electron microscopy, high-resolution transmission electron micros copy, and scanning electron microscopy images indicate that the products ar e straight crystalline silicon nanowires with diameters of 10-60 nm. The fo rmation mechanism of the nanowires is discussed. (C) 2000 American Institut e of Physics. [S0003-6951(00)02521-3].