Accumulation hole layer in p-GaN/AlGaN heterostructures

Citation
Ms. Shur et al., Accumulation hole layer in p-GaN/AlGaN heterostructures, APPL PHYS L, 76(21), 2000, pp. 3061-3063
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
21
Year of publication
2000
Pages
3061 - 3063
Database
ISI
SICI code
0003-6951(20000522)76:21<3061:AHLIPH>2.0.ZU;2-A
Abstract
We present the results on piezoelectric and pyroelectric doping in AlGaN-on -GaN and GaN-on-AlGaN heterostructures and demonstrate p-GaN/AlGaN structur es with accumulation hole layer. Our results indicate that polarization cha rge can induce up to 5x10(13) cm(-2) holes at the AlGaN/GaN heterointerface s. We show that the transition from three-dimensional (3D) to two-dimension al (2D) hole gas can be only achieved for hole sheet densities on the order of 10(13) cm(-2) or higher. At lower densities, only 3D-hole accumulation layer may exist. These results suggest that a piezoelectrically induced 2D- hole gas can be used for the reduction of the base spreading resistance in AlGaN/GaN-based heterostructure bipolar transistors. (C) 2000 American Inst itute of Physics. [S0003-6951(00)00421-6].