We present the results on piezoelectric and pyroelectric doping in AlGaN-on
-GaN and GaN-on-AlGaN heterostructures and demonstrate p-GaN/AlGaN structur
es with accumulation hole layer. Our results indicate that polarization cha
rge can induce up to 5x10(13) cm(-2) holes at the AlGaN/GaN heterointerface
s. We show that the transition from three-dimensional (3D) to two-dimension
al (2D) hole gas can be only achieved for hole sheet densities on the order
of 10(13) cm(-2) or higher. At lower densities, only 3D-hole accumulation
layer may exist. These results suggest that a piezoelectrically induced 2D-
hole gas can be used for the reduction of the base spreading resistance in
AlGaN/GaN-based heterostructure bipolar transistors. (C) 2000 American Inst
itute of Physics. [S0003-6951(00)00421-6].