Growth oscillation decay rates for control of III-V molecular beam epitaxynear stoichiometry

We have investigated the decay of reflection high-energy electron diffracti on oscillations during growth of InAs (001), as a function of growth parame ters, such as the V/III ratio. We have shown that the decay constants are s ensitive to changes in growth morphology, as measured by scanning tunneling microscopy. Our experiments show that the values of these decay constants decrease at high V/III ratios, in agreement with previous work. Additionall y, we have found that the values of the decay constants diverge as the tran sition between the (2x4) and (4x2) reconstructions is approached. We propos e that the decay constants of the growth oscillations may be used as inputs for control of interface morphology. (C) 2000 American Institute of Physic s. [S0003-6951(00)03321-0].