Epitaxial Pb(Mg1/3Nb2/3)O-3 thin films synthesized by metal-organic chemical vapor deposition

Metal-organic chemical vapor deposition was used to prepare Pb(Mg1/3Nb2/3)O -3 (PMN) thin films on (001) SrTiO3 and SrRuO3/SrTiO3 substrates, using sol id Mg beta-diketonate as the Mg precursor. Parameters including the precurs or ratio in the vapor phase, growth temperature, growth rate, and reaction pressure in the reactor chamber were varied in order to determine suitable growth conditions for producing phase-pure, epitaxial PMN films. A cube-on- cube orientation relationship between the thin film and the SrTiO3 substrat e was found, with a (001) rocking curve width of 0.1 degrees, and in-plane rocking-curve width of 0.8 degrees. The root-mean-square surface roughness of a 200-nm-thick film on SrTiO3 was 2 to 3 nm as measured by scanning prob e microscopy. The zero-bias dielectric constant and loss measured at room t emperature and 10 kHz for a 200-nm-thick film on SrRuO3/SrTiO3 were approxi mately 1100 and 2%, respectively. The remnant polarization for this film wa s 16 mu C/cm(2). (C) 2000 American Institute of Physics. [S0003- 6951(00)04 321-7].