The role of interface states in hydrogen-annealing-induced mobile proton generation at the Si-SiO2 interface

It is demonstrated that a 450 degrees C anneal in hydrogen, known to passiv ate traps at the Si-SiO2 interface, can impede the generation of mobile pro tons during a subsequent hydrogen anneal at 600 degrees C. We further prese nt a detailed reaction and diffusion model for the mobile proton buildup in the buried oxide of Si-SiO2-Si capacitors during a hydrogen anneal at 600 degrees C. In this model, unpassivated interface traps, located at and near the physical edges of the capacitor area, play a key role during the initi al stages of the proton generation process. The mobile protons are generate d near these edges and diffuse laterally along the Si-SiO2 interface. (C) 2 000 American Institute of Physics. [S0003-6951(00)03821-3].