Current controlled negative resistance phenomenon in SbPbSe system

Authors
Wagle, S Shirodkar, V
Citation
S. Wagle et V. Shirodkar, Current controlled negative resistance phenomenon in SbPbSe system, CZEC J PHYS, 50(5), 2000, pp. 635-643
Citations number
20
Categorie Soggetti
Physics
Journal title
CZECHOSLOVAK JOURNAL OF PHYSICS
ISSN journal
00114626 → ACNP
Volume
50
Issue
5
Year of publication
2000
Pages
635 - 643
Database
ISI
SICI code
0011-4626(200005)50:5<635:CCNRPI>2.0.ZU;2-2
Abstract
Thin film Al/Sb2Pb1Se7/Al metal-glass-metal sandwiched structures prepared using thermal evaporation technique have been studied. The I-V measurements showed that the devices switched from high resistance 'OFF' state to a low resistance 'ON' state when a particular voltage appeared across it. The 'O FF' state I-V characteristics showed nonohmic behaviour while in the 'ON' s tate the devices displayed purely linear characteristics. The switching vol tage (Vth) was found to depend on film thickness and temperature of the dev ice. A linear relation between V-th and temperature was observed.