The paper reports on properties and structure of the TiN films, which have
been deposited on titanium interlayer covering a steel substrate. The Ti in
terlayer and the TiN film were prepared by d.c. magnetron sputtering in Ar
and Ar + N-2 mixture, respectively. Three Ti interlayers with different thi
ckness h(Ti) = 0.01, 0.1 and 0.2 mu m were prepared under the sane conditio
ns and investigated. It was found that the macroscopic residual stress in t
he TiN films is compressive and increases with the increasing negative bias
up to approximately -150V. Also the size of the TiN crystallites decreases
with the increasing negative substrate bias, varying between 250 nm and 11
nm. The critical load, which characterises the film adhesion, increases wi
th increasing h(Ti). For h(Ti) greater than or equal to 0.1 mu m, the criti
cal load almost does not depend on the bias voltage.