Gain flattened L-band EDFA based on upgraded C-band EDFA using forward ASEpumping in an EDF section

Authors
Buxens, A Poulsen, HN Clausen, AT Jeppesen, P
Citation
A. Buxens et al., Gain flattened L-band EDFA based on upgraded C-band EDFA using forward ASEpumping in an EDF section, ELECTR LETT, 36(9), 2000, pp. 821-823
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
9
Year of publication
2000
Pages
821 - 823
Database
ISI
SICI code
0013-5194(20000427)36:9<821:GFLEBO>2.0.ZU;2-L
Abstract
A novel method is presented for implementing an L-band erbium doped fibre a mplifier (EDFA) making use of forward amplified spontaneous emission pumpin g, from a commercially available c-band EDFA, in an erbium doped fibre. Tun ing of the length of erbium doped fibre enables a flat gain characteristic to be obtained with a low noise figure over the entire L-band window.