Strong photosensitivity in tin-doped silica films

Authors
Gaff, K Durandet, A Weijers, T Love, J Boswell, R
Citation
K. Gaff et al., Strong photosensitivity in tin-doped silica films, ELECTR LETT, 36(9), 2000, pp. 842-843
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
9
Year of publication
2000
Pages
842 - 843
Database
ISI
SICI code
0013-5194(20000427)36:9<842:SPITSF>2.0.ZU;2-E
Abstract
The observation is reported of a strong negative change in the refractive i ndex of tin-doped thin silica films deposited by helicon activated reactive evaporation. Samples with concentrations between 5 and 25mol% SnO2 were ex posed to 2 kJ/cm(2) of 248 nm UV radiation. Negative refractive index chang es as large as -2.7 x 10(-3) were observed on irradiation.