Temperature behaviour of optical properties of Si+-implanted SiO2

Silicon nanocrystals were prepared by S+-ion implantation and subsequent an nealing of SiO2 films thermally grown on a c-Si wafer. Different implantati on energies (20-150 keV) and doses (7 x 10(15)- x 10(17) cm(-2)) were used in order to achieve flat implantation profiles (through the thickness of ab out 100 nm) with a peak concentration of Si atoms of 5, 7, 10 and 15 atomic %. The presence of Si nanocrystals was verified by transmission electron mi croscopy. The samples exhibit strong visible/IR photoluminescence (PL) with decay time of the order of tens of mu s at room temperature. The changes o f PL in tie range 70-300 K can be well explained by the exciton singlet-tri plet splitting model. We show that all PL characteristics (efficiency, dyna mics, temperature dependence, excitation spectra) of our Si+-implanted SiO2 films bear close resemblance to those of a light-emitting porous Si and th erefore we suppose similar PL origin in both materials.