A novel flash EEPROM cell based on trench technology for integration within power integrated circuits

Authors
Garner, DM Chen, Y Sabesan, L Amaratunga, GAJ Blackburn, A Clark, J Sekiariapuram, SS Evans, AGR
Citation
Dm. Garner et al., A novel flash EEPROM cell based on trench technology for integration within power integrated circuits, IEEE ELEC D, 21(5), 2000, pp. 236-238
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
21
Issue
5
Year of publication
2000
Pages
236 - 238
Database
ISI
SICI code
0741-3106(200005)21:5<236:ANFECB>2.0.ZU;2-G
Abstract
A flash EEPROM suitable for integration within power integrated circuits (P IC's) is presented. The EEPROM cell uses a trench floating gate to give a l arge gate charge while using no more silicon area than a conventional flash EEPROM cell, The cell shows good immunity against the induced disturbance voltages which are present in a PIC, and the storage lifetime is greater th an ten years at a reading voltage of V-D = 2.2 V circuits.