Modeling of 10-nm-scale ballistic MOSFET's

We have performed numerical modeling of nanoscale dual-gate ballistic n-MOS FET's with ultrathin undoped channel, taking into account the effects of qu antum tunneling along the channel and through the gate oxide, The results s how that transistors with channel length as small as 8 nm can exhibit eithe r a transconductance up to 4000 mS/mm or gate modulation of current by more than 8 orders of magnitude, depending on the gate oxide thickness. These c haracteristics make the sub-10-nm devices potentially suitable for logic an d memory applications, though their parameters are rather sensitive to size variations.