An analytical solution to a double-gate MOSFET with undoped body

Authors
Citation
T. Yuan, An analytical solution to a double-gate MOSFET with undoped body, IEEE ELEC D, 21(5), 2000, pp. 245-247
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
21
Issue
5
Year of publication
2000
Pages
245 - 247
Database
ISI
SICI code
0741-3106(200005)21:5<245:AASTAD>2.0.ZU;2-S
Abstract
A one-dimensional (1-D) analytical, solution is derived for an undoped (or lightly-doped) double-gate MOSFET by incorporating only the mobile charge t erm in Poisson's equation. The solution gives closed forms of band bending and volume inversion as a function of silicon thickness and gate voltage. A threshold criterion is derived which serves to quantify the gate work func tion requirements for a double-gate CMOS.