A one-dimensional (1-D) analytical, solution is derived for an undoped (or
lightly-doped) double-gate MOSFET by incorporating only the mobile charge t
erm in Poisson's equation. The solution gives closed forms of band bending
and volume inversion as a function of silicon thickness and gate voltage. A
threshold criterion is derived which serves to quantify the gate work func
tion requirements for a double-gate CMOS.