Ultrathin-body SOI MOSFET for deep-sub-tenth micron era

A 40-nm-gate-length ultrathin-body (UTB) nMOSFET is presented with 20-nm bo dy thickness and 2.4-nm gate oxide, The UTB structure eliminates leakage pa ths and is an extension of a conventional SOI MOSFET for deep-sub-tenth mic ron CMOS. Simulation shows that the UTB SOI MOSFET can be scaled down to 18 -nm gate length with <5 nm UTB. A raised poly-Si S/D process is employed to reduce the parasitic series resistance.