A compact monolithic C-band direct conversion receiver

A compact monolithic C-band direct conversion receiver has been implemented in a commercial 0.6-mu m GaAs MESFET process. Subharmonic mixing is utiliz ed to suppress even-order intermodulations and eliminate de offsets. Second -order input intercept: point (IIP2) of +17 dBm, third-order input intercep t point (IIP3) of +8 dBm, and de offset of -80 dBm are measured on wafer wi thout the use of additional off-chip components, This receiver occupies a d ie area of 35 x 53 mil(2) and operates on 2.7 V with 21 mA of de current. T his is the first demonstration of a C-baud direct conversion receiver MMIC with excellent linearity, dc offset, and de power consumption.