Coupled structure for wide-band EDFA with gain and noise figure improvements from C to L-band ASE injection

Citation
B. Min et al., Coupled structure for wide-band EDFA with gain and noise figure improvements from C to L-band ASE injection, IEEE PHOTON, 12(5), 2000, pp. 480-482
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
5
Year of publication
2000
Pages
480 - 482
Database
ISI
SICI code
1041-1135(200005)12:5<480:CSFWEW>2.0.ZU;2-0
Abstract
We propose a novel structure for C plus L-band silica based wide-band erbiu m-doped fiber amplifiers (W-EDFA's), which use backward amplified spontaneo us emission from the C-band EDFA as the pump-mediating injection source for the L-band amplifier unit. Experimental results show gain and noise figure improvements of over 2.6 dB and 0.6 dB, respectively, at -3.5 dBm of L-ban d input signal power, Spatially resolved numerical analysis confirms the pu mp-mediating effect of C-band backward ASE in the L-band EDFA for the gain and noise figure improvement, which also provides better understanding on t he dynamics of C-band injection seed methods.