A new quantum effect model for practical device simulation

An increase in a complexity of VLSI design, especially in process integrati on, is leading to increased demands for technology CAD (TCAD). The quantum mechanical (QM) effect becomes very important with an increase in the channel impurity concentration. Several models for the QM effect hav e been proposed. However, it has been reported that these models had some p roblems. In this paper, a new QM model for a conventional device simulator is proposed. Applications of this model to NMOS and PMOS including the buri ed-channel are examined.