A review of the pseudo-MOS transistor in SOI wafers: Operation, parameter extraction, and applications

The pseudo-MOS transistor (Psi-MOSFET) is a surprising and useful technique for the rapid evaluation of SOI wafers, prior to any CMOS processing. We r eview the static and dynamic modes of operation as well as the main models and methods for electrical parameter extraction. Selected numerical simulat ions are presented in order to clarify the optimal conditions of operation. Finally, practical applications are exemplified which illustrate the effic iency of the Psi-MOSFET technique for in situ characterization of SOI techn ologies and processes.