A better insight into the performance of silicon BJT's featuring highly nonuniform collector doping profiles

Citation
P. Palestri et al., A better insight into the performance of silicon BJT's featuring highly nonuniform collector doping profiles, IEEE DEVICE, 47(5), 2000, pp. 1044-1051
Citations number
23
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
47
Issue
5
Year of publication
2000
Pages
1044 - 1051
Database
ISI
SICI code
0018-9383(200005)47:5<1044:ABIITP>2.0.ZU;2-O
Abstract
This paper investigates the effects of highly nonuniform collector doping p rofiles on the speed and breakdown performance of silicon bipolar transisto rs. Monte Carlo and drift diffusion simulation results point out that a thi n highly doped layer adjacent to the base collector junction can improve th e device cut off frequency without deteriorating significantly the maximum oscillation frequency and the breakdown voltage, provided the voltage drop across this layer is lower than an effective threshold of approximately 1.2 V. Guidelines are given for choosing the doping, position, and thickness o f this layer.