Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

We present a method of coupling drift-diffusion simulations with quantum tr ansmitting boundary method (QTBM) tunnel current calculations. This allows self-consistent simulation of thin oxide devices in which large tunnel curr ents can flow. Simulated results are presented for a thin oxide Al/SiO2/Si structure and an Al/SiO2/n-Si/p-Si tunnel switching diode. We demonstrate t he careful use of the recombination lifetime as an adjustable or relaxable parameter in order to obtain converging solutions.