On the origin of the dispersion of erased threshold voltages in flash EEPROM memory cells

Authors
Esseni, D Ricco, B
Citation
D. Esseni et B. Ricco, On the origin of the dispersion of erased threshold voltages in flash EEPROM memory cells, IEEE DEVICE, 47(5), 2000, pp. 1120-1123
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
47
Issue
5
Year of publication
2000
Pages
1120 - 1123
Database
ISI
SICI code
0018-9383(200005)47:5<1120:OTOOTD>2.0.ZU;2-E
Abstract
This work investigates the origin of the dispersion of tunnel-erased thresh old voltages (V-T) in flash EEPROM memory cells. A clear correlation betwee n cell-to-cell variations of tunnel current I-T. and dispersion of erased V -T is demonstrated by looking at the I-T characteristics and the erasing ch aracteristics corresponding to channel and source injection as well as at t he dependence of I-T and V-T dispersion on device area and tunnel polarity. Experimental evidence is provided that nonuniform injection at polySi/SiO2 interface is a major cause of erased V-T dispersion.