Observation of coherent phonon states in porous silicon films

Citation
Al. Dobryakov et al., Observation of coherent phonon states in porous silicon films, JETP LETTER, 71(7), 2000, pp. 298-302
Citations number
20
Categorie Soggetti
Physics
Journal title
JETP LETTERS
ISSN journal
00213640 → ACNP
Volume
71
Issue
7
Year of publication
2000
Pages
298 - 302
Database
ISI
SICI code
0021-3640(2000)71:7<298:OOCPSI>2.0.ZU;2-X
Abstract
The dynamics of differential transmission and reflectance spectra of porous silicon films was studied using the femtosecond excitation technique (tau approximate to 50 fs, (h) over bar omega(pump) = 2.34 eV) with supercontinu um probing ((h) over bar omega(probe) = 1.6-3.2 eV) and controlled time del ay with a step of Delta t = 7 fs between the pump and probe pulses. A short -lived region of photoinduced bleaching was observed in the differential tr ansmission spectra at wavelengths shorter than the pump wavelength. The exc itation of coherent phonon states with a spectrum corresponding to nanocrys talline silicon with an admixture of a disordered phase was observed. The r elaxation of electronic excitation was found to slow down in the spectral r egion where the amplitude of excited coherent vibrations was maximal. (C) 2 000 MAIK "Nauka / Interperiodica".