Heterostructures in GaInP grown using a change in Te doping

In organometallic vapor phase epitaxy, changes in growth conditions can be used to modulate the extent of CuPt ordering and, hence, the band gap energ y of GaInP. One method is to add Te during growth. An increase in the band gap energy of 0.1 eV due to a decrease in ordering has been obtained by inc reasing the input pressure of diethyltelluride from 0 to 8x10(-6) Torr, whi ch corresponds to a doping concentration of 6x10(17) cm(-3). This simple pr ocedure offers an attractive method to grow quantum wells (QWs) and superla ttices, which are useful for band gap engineering, by modulating the input pressure of the Te precursor. Various heterostructures with abrupt interfac es were successfully grown with interruptions at the interfaces between the Te-doped and undoped GaInP layers. QWs as thin as 10 nm can be clearly see n from transmission electron microscope images. (C) 2000 American Institute of Physics. [S0021- 8979(00)07411-9].