Transport properties of Be- and Si-doped AlSb

Citation
Br. Bennett et al., Transport properties of Be- and Si-doped AlSb, J APPL PHYS, 87(11), 2000, pp. 7876-7879
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
11
Year of publication
2000
Pages
7876 - 7879
Database
ISI
SICI code
0021-8979(20000601)87:11<7876:TPOBAS>2.0.ZU;2-X
Abstract
Thick epitaxial layers of AlSb(Si) and AlSb(Be) were grown by molecular bea m epitaxy and characterized by variable-temperature Hall/van der Pauw measu rements. Si is shown to be predominantly an acceptor in AlSb, with an energ y level 33 +/- 4 meV above the top of the valence band. Be is also an accep tor, with an energy level 38 +/- 4 meV above the top of the valence band. B e is a robust doping source for p-AlSb for carrier densities ranging from 1 0(15) to 10(19) cm(-3). Background impurity levels in AlSb can be assessed by measuring the transport properties of lightly doped AlSb(Be) layers. (C) 2000 American Institute of Physics. [S0021- 8979(00)00811-2].