Secondary electron emission characteristics of single-crystal and polycrystalline diamond

Authors
Citation
Je. Yater et A. Shih, Secondary electron emission characteristics of single-crystal and polycrystalline diamond, J APPL PHYS, 87(11), 2000, pp. 8103-8112
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
11
Year of publication
2000
Pages
8103 - 8112
Database
ISI
SICI code
0021-8979(20000601)87:11<8103:SEECOS>2.0.ZU;2-E
Abstract
Secondary electron emission spectroscopy (SEES) is used to examine the tran sport and emission of low-energy electrons in diamond. In particular, SEES measurements from single-crystal (100) and (111) diamond and polycrystallin e chemical vapor deposited (CVD) diamond are compared in order to examine t he effect of crystallographic orientation on the emission characteristics. Crystal orientation is found to influence the surface properties of the sam ples but not the low-energy transport properties. Specifically, very high y ields are obtained from negative-electron-affinity (NEA) surfaces of all th ree samples, indicating that low-energy electrons are transported and emitt ed very efficiently regardless of crystal orientation. However, the energy distributions measured from adsorbate-covered C(111) surfaces are broader a nd shifted lower in energy than those measured from corresponding C(100) su rfaces. In fact, the energy distributions measured from polycrystalline CVD diamond surfaces appear to be a superposition of the energy distributions measured from the (100) and (111) crystal faces. For all three samples, a b roader, lower-energy distribution is measured from cesiated NEA surfaces th an from hydrogenated NEA surfaces. This indicates that the electron emissio n process differs at the two types of surfaces. The emission characteristic s observed for the different crystal orientations and adsorbate coverages c an be understood by considering the role of surface structure in the emissi on process. [S0021-8979(00)04711-3].