Photoluminescence of InAs1-xSbx/AlSb single quantum wells: Transition fromtype-II to type-I band alignment

Authors
Yang, MJ Bennett, BR Fatemi, M Lin-Chung, PJ Moore, WJ Yang, CH
Citation
Mj. Yang et al., Photoluminescence of InAs1-xSbx/AlSb single quantum wells: Transition fromtype-II to type-I band alignment, J APPL PHYS, 87(11), 2000, pp. 8192-8194
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
11
Year of publication
2000
Pages
8192 - 8194
Database
ISI
SICI code
0021-8979(20000601)87:11<8192:POISQW>2.0.ZU;2-6
Abstract
Infrared photoluminescence has been used to study the band-gap energy of In As1-xSbx digital superlattices and band alignment of InAs1-xSbx/AlSb quantu m wells at 5 K. It is found that the InAs1-xSbx digital alloys have a small er effective band gap than InAs1-xSbx random alloys. In addition, the valen ce band offset between type-II InAs/AlSb is determined to be 130 meV. This number reduces as the Sb mole fraction in InAs1-xSbx is increased, and the alignment between InAs1-xSbx/AlSb becomes type I when x > 0.15. (C) 2000 Am erican Institute of Physics. [S0021- 8979(00)03911-6].