Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants

An improved charge separation technique for metal-oxide-silicon (MOS) capac itors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation bias es. Using high-frequency capacitance-voltage measurements, radiation-induce d inversion voltage shifts are separated into components due to oxide trapp ed charge, interface traps, and deactivated dopants, where the latter is co mputed from a reduction in Si capacitance. In the limit of no radiation-ind uced dopant deactivation, this approach reduces to the standard midgap char ge separation technique used widely for the analysis of room-temperature ir radiations. The technique is demonstrated on a p-type MOS capacitor irradia ted with Co-60 gamma rays at 100 degrees C and zero bias, where the dopant deactivation is significant. (C) 2000 American Institute of Physics. [S0021 -8979(00)03811-1].