Atomic resolution Z-contrast imaging of semiconductors

The direct interpretability of atomic resolution Z-contrast images obtained from a scanning transmission electron microscope (STEM) makes this imaging technique particularly powerful for the analysis of interfaces and defects in semiconductor materials and devices. In this paper, the principles of t he technique are outlined and representative examples of its use are presen ted. In particular, we show the use of Z-contrast imaging to determine the polarity of a CdTe film grown on a Si substrate, the atomic structures of s tacking faults and threading dislocation cores in GaN, and the atomistic st ructure of an ohmic metal/semiconductor contact of Au/GaAs.