Quantitative TEM of point defects in Si

We review the use of transmission electron microscopy (TEM) to provide a qu antitative measurement of both vacancy and interstitial clusters in ion-imp lanted silicon. Interstitials agglomerate into rod-like defects on {311} pl anes, and the evaporation of these defects can be directly correlated to th e diffusion enhancements observed during annealing of ion-damaged silicon. Vacancy clusters are easily detected in TEM once they have been labelled us ing a Au-diffusion technique. The combination of the two approaches provide s a quantitative test for models of implantation and annealing in silicon. Detailed models for point defect behaviour, which include Ostwald-ripening and the surface recombination velocity, reproduce all of the crucial featur es of the observed defect annealing.