Single-source MOCVD of binary alloy CoSn thin films

Authors
Sun, THW Wang, HF Chi, KM
Citation
Thw. Sun et al., Single-source MOCVD of binary alloy CoSn thin films, J MAT CHEM, 10(5), 2000, pp. 1231-1233
Citations number
34
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS CHEMISTRY
ISSN journal
09599428 → ACNP
Volume
10
Issue
5
Year of publication
2000
Pages
1231 - 1233
Database
ISI
SICI code
0959-9428(200005)10:5<1231:SMOBAC>2.0.ZU;2-3
Abstract
Polycrystalline CoSn alloy thin films have been successfully prepared by lo w-pressure chemical vapor deposition from two single-source organometallic precursors containing Co-Sn bonds, Me3SnCo(CO)(4) at 250-300 degrees C and Ph3SnCo(CO)(4) at 300-400 degrees C. Deposition rates were 250-660 Angstrom min(-1). Deposited films were characterized by scanning electron microscop ic, energy dispersive spectroscopic, atomic absorption spectroscopic, X-ray diffraction, and Auger electron spectroscopic analyses. Co and Sn elements are evenly distributed in the films. The films are composed of the CoSn ph ase with a minor constituent of alpha-Co3Sn2.