Recovery of electron irradiated V-Ga alloys

Citation
T. Leguey et al., Recovery of electron irradiated V-Ga alloys, J NUCL MAT, 279(2-3), 2000, pp. 364-367
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
JOURNAL OF NUCLEAR MATERIALS
ISSN journal
00223115 → ACNP
Volume
279
Issue
2-3
Year of publication
2000
Pages
364 - 367
Database
ISI
SICI code
0022-3115(200006)279:2-3<364:ROEIVA>2.0.ZU;2-Y
Abstract
The recovery characteristics of electron-irradiated V-Ga alloys with 1.2 an d 4.6 at.% Ga have been investigated by positron annihilation spectroscopy (PAS). It is found that vacancies created by electron irradiation become mo bile in these alloys at similar to 293 K. This temperature is noticeably lo wer than that in pure V and V-Ti alloys. The vacancies aggregate into micro voids in V-4.6Ga, but do not in V-1.2Ga. The results indicate that vacancie s are bound to Ga-interstitial impurity pairs. (C) 2000 Elsevier Science B. V. All rights reserved.