The recovery characteristics of electron-irradiated V-Ga alloys with 1.2 an
d 4.6 at.% Ga have been investigated by positron annihilation spectroscopy
(PAS). It is found that vacancies created by electron irradiation become mo
bile in these alloys at similar to 293 K. This temperature is noticeably lo
wer than that in pure V and V-Ti alloys. The vacancies aggregate into micro
voids in V-4.6Ga, but do not in V-1.2Ga. The results indicate that vacancie
s are bound to Ga-interstitial impurity pairs. (C) 2000 Elsevier Science B.
V. All rights reserved.