Electron injection, recombination, and halide oxidation dynamics at dye-sensitized metal oxide interfaces

Citation
Ta. Heimer et al., Electron injection, recombination, and halide oxidation dynamics at dye-sensitized metal oxide interfaces, J PHYS CH A, 104(18), 2000, pp. 4256-4262
Citations number
25
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF PHYSICAL CHEMISTRY A
ISSN journal
10895639 → ACNP
Volume
104
Issue
18
Year of publication
2000
Pages
4256 - 4262
Database
ISI
SICI code
1089-5639(20000511)104:18<4256:EIRAHO>2.0.ZU;2-F
Abstract
Time-resolved infrared measurements indicate ultrafast, <350 fs, electron i njection from (4,4'dcb)(2)Ru(NCS)(2) (1) and (5,5'dcb)(2)Ru(NCS)(2) (2) to nanostructured TiO2 electrodes (where 4,4'dcb = 4,4'-(COOH)(2)-2,2'-bipyrid ine). Although rapid, the injection from 2 apparently occurs with a lower q uantum yield than that from 1, explaining a lower overall photon-to-current efficiency for 2/TiO2 solar cells. Transient visible spectroscopy reveals similar rates of both halide oxidation and injected electron-oxidized dye r ecombination for the two sensitizers. Substituting SnO2 for TiO2 increases the electron injection yield from 2 in the case of transparent metal oxide films and improves the photon-to-current efficiency. Results indicate a wav elength-dependent electron injection yield.