Fourier-transform infrared reflection study of the morphology of porous semiconductor structures

Authors
Belogorokhov, A Pusep, YA Belogorokhova, L
Citation
A. Belogorokhov et al., Fourier-transform infrared reflection study of the morphology of porous semiconductor structures, J PHYS-COND, 12(16), 2000, pp. 3897-3900
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
12
Issue
16
Year of publication
2000
Pages
3897 - 3900
Database
ISI
SICI code
0953-8984(20000417)12:16<3897:FIRSOT>2.0.ZU;2-3
Abstract
Porous semiconductor films (GaAs and GaP) were studied by Fourier-transform infrared reflection spectroscopy, which was shown to enable one to determi ne their morphologies and such essential parameters for the porous structur es as the filling factor.