Nucleation and growth of epitaxial cadmium selenide electrodeposited on InP and GaAs single crystals

Epitaxial CdSe layers were electrodeposited from aqueous solutions onto InP and GaAs single crystals. The analysis of current transients shows that th e growth kinetics corresponds to the Scharifker model assuming a progressiv e nucleation followed by three-dimensional diffusion-limited growth. Diffus ion control is effective after less than 0.1 s after the beginning of the p otential pulse. The phenomena associated with the formation of a coherent f ilm cannot be detected by this technique. Transmission electron microscopy observations of CdSe films with increasing thicknesses show when the diffus ion control is effective, a large density of growth steps followed by the f ormation of epitaxial nuclei which finally coalesce. (C) 2000 The Electroch emical Society. S0013-4651(99)10-049-1. All rights reserved.