Near infrared luminescent device and optical spectroscopy of Er-doped gallium nitride prepared by metalorganic molecular beam epitaxy

The 1.54-mu m infrared luminescence from erbium-doped gallium nitride is of significant current interest for potential applications in optical communi cations. The GaN:Er samples used in this study were prepared by metalorgani c molecular beam epitaxy. They exhibited characteristic photoluminescence ( PL) at 1.54 mu m arising from an intra-4f transition of Er3+ ions. The inte grated 1.54-mu m PL intensity was relatively temperature stable and changed by less than a factor of similar to 10 for the temperature range from 15 s imilar to 550 K. The weak Er3+ thermal quenching observed below room temper ature was attributed to non-radiative decay whereas the increased quenching above room temperature was assigned to a reduction in excitation efficienc y. A hybrid light-emitting diode (LED) at 1.54 mu m was demonstrated by exc iting a GaN: Er film with either the blue or the green light from a commerc ial InGaN LED.