Kinetic study of 3C-SiC growth on Si by pyrolyzing tetramethysilane in lowpressure radio frequency-induction heated chemical vapor deposition reactor

Single crystal 3C-SiC films were grown on Si(111) substrate using tetrameth ylsilane [TMS,(CH3)(4)Si] in a low pressure radio frequency-induction heate d chemical vapor deposition reactor. The growth rate of 3C-SiC film increas ed with increasing TMS flow rate and growth temperature. The growth kinetic s of SC-SiC film was determined by analyzing the experimental data on the g rowth rate. The growth reaction of 3C-SiC film was the first order of TMS p artial pressure in the reactor. The reaction rate controlling step changed from the surface reaction in the temperature range of 1100-1250 degrees C t o the diffusion of reactive gases at higher temperatures above 1250 degrees C. The activation energies were 72.2 kcal/min for the surface reaction-con trolling step and 38.2 kcal/min for the diffusion-controlling step. At the growth temperatures, TMS was dissociated into hydrogen, Si atoms, and hydro carbon gases such as CH3 ., CH4, C2H2, and C2H4 The effective reactive spec ies for the growth of 3C-SiC turned out to be gaseous Si atoms and methyl r adicals in this growth system. The mechanisms of TMS decomposition and SiC growth were discussed in detail based on quadrapole mass spectrometer analy sis. (C) 2000 American Vacuum Society. [S0734-2101(00)03403-5].