Low noise bipolar complementary metal-oxide-semiconductor mixer for radio frequency applications

Citation
S. Colomines et al., Low noise bipolar complementary metal-oxide-semiconductor mixer for radio frequency applications, J VAC SCI A, 18(3), 2000, pp. 1002-1005
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
18
Issue
3
Year of publication
2000
Pages
1002 - 1005
Database
ISI
SICI code
0734-2101(200005/06)18:3<1002:LNBCMM>2.0.ZU;2-T
Abstract
This article presents a low IF mixer featuring metal-oxide-semiconductor de vices in the rf and the active load stages for DCS applications which have been optimized with respect to the supply voltage (2.2 V), current consumpt ion (<10 mA), gain (10 dB), linearity (IIP3 = 8.5 dBm), and noise (DSB Nf = 13 dB at 100 kHz). Special attention has been paid to the identification o f the noise mechanisms. (C) 2000 American Vacuum Society. [S0734-2101(00)02 003-0].