Modeling and characterization of logarithmic complementary metal-oxide-semiconductor active pixel sensors

Citation
M. Tabet et al., Modeling and characterization of logarithmic complementary metal-oxide-semiconductor active pixel sensors, J VAC SCI A, 18(3), 2000, pp. 1006-1009
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
18
Issue
3
Year of publication
2000
Pages
1006 - 1009
Database
ISI
SICI code
0734-2101(200005/06)18:3<1006:MACOLC>2.0.ZU;2-K
Abstract
We present a detailed analysis of logarithmic active pixel sensors (log-APS ) to be used in complementary metal-oxide-semiconductor (CMOS) imagers for real-time on-chip motion detection. Based on an equivalent circuit model fo r CMOS-compatible photodiodes. an HSPICE simulation has been used to charac terize different configurations of these sensors under various conditions o f light intensities and switching speeds. These investigations are supporte d by the experimental results obtained from the chip fabricated with standa rd 0.5 mu m CMOS technology. It is concluded that more robust on-chip motio n detection in CMOS imagers can be achieved with careful design of its log- APS photocircuits that considers the issues discussed here. (C) 2000 Americ an Vacuum Society. [S0734-2101(00)01803-0].