Using self-assembled monolayers exposed to X-rays to control the wetting behavior of thin films of diblock copolymers

Citation
Rd. Peters et al., Using self-assembled monolayers exposed to X-rays to control the wetting behavior of thin films of diblock copolymers, LANGMUIR, 16(10), 2000, pp. 4625-4631
Citations number
37
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
LANGMUIR
ISSN journal
07437463 → ACNP
Volume
16
Issue
10
Year of publication
2000
Pages
4625 - 4631
Database
ISI
SICI code
0743-7463(20000516)16:10<4625:USMETX>2.0.ZU;2-9
Abstract
The wetting behavior of thin films of symmetric poly(styrene-bloch-methyl m ethacrylate) was investigated on self-assembled monolayers (SAMs) of octade cyltrichlorosilane (OTS) that were chemically modified by exposure to X-ray s in the presence of air. The concentration of aldehyde and hydroxyl groups on the surface of exposed OTS increases with increasing dose. The polarity and surface tension of the SAMs were tuned to control the wetting behavior of the polymer films. Symmetric, neutral, and asymmetric wetting of the fi lms were observed for doses of 400-1000, 1200, and 1400-2000 mJ/cm(2), resp ectively. The wetting behavior was qualitatively described by estimating th e interfacial energies between each block of the copolymer and exposed SAMs and the surface tensions of both blocks using the Fowkes-van Oss-Chaudhury -Good model of surface tension. These results lay the foundation for contro lling the morphology of thin films of block copolymers over macroscopic dim ensions by nanopatterning substrates with regions of different wetting beha vior using advanced lithography.