Deep ion projection lithography in PMMA: Substrate heating and ion energy concerns

Citation
M. Lindeberg et al., Deep ion projection lithography in PMMA: Substrate heating and ion energy concerns, MICROSYST T, 6(4), 2000, pp. 135-140
Citations number
10
Categorie Soggetti
Instrumentation & Measurement
Journal title
MICROSYSTEM TECHNOLOGIES
ISSN journal
09467076 → ACNP
Volume
6
Issue
4
Year of publication
2000
Pages
135 - 140
Database
ISI
SICI code
0946-7076(200004)6:4<135:DIPLIP>2.0.ZU;2-L
Abstract
Previous studies of deep ion projection lithography (DIPL) in various polym ers using heavy ions from a medium energy accelerator have addressed the ne ed for a less expensive technique. Here, a van de Graaff low energy acceler ator has been used for DIPL with 8 MeV protons in 500 mu m thick sheets of polymethylmethacrylate (PMMA). Standard type and strongly crosslinked PMMA were used. Although DIPL has not reached the same maturity as LIGA the adva ntages with DIPL are that it can be considerably cheaper, faster, and that it is possible to do 3-dimensional reproductions of the mask. The need for optimising a future DIPL irradiation system has led us to investigate the m icroscopic and macroscopic heating induced by the ion beam, as well as the heat transport. The DIPL technique, which enables high throughput productio n of LIGA-like structures in several insulating materials, has been used wi th success on thick PMMA.