QUADRUPOLAR NUTATION NMR ON A COMPOUND SEMICONDUCTOR GALLIUM-ARSENIDE

Lattice defects in a compound semiconductor, gallium-arsenide are eval uated by two-dimensional nutation nuclear magnetic resonance. Especial ly in the case of indium doped gallium-arsenide, analysis of the nutat ion patterns indicates that the electric field gradient exists in the whole crystal. Asymmetry parameters and quadrupolar coupling constants are determined as approximately 1.0 and 93 kHz, respectively. These r esults suggest that the whole crystal is under slight strain. Through this work, it is demonstrated that a two-dimensional nutation nuclear magnetic resonance is the useful method to investigate the lattice def ects in gallium-arsenide. (C) 1997 Elsevier Science B.V.