Dependence of transmission and scattering of ultrarelativistic electrons in thin single-crystal target on the crystallographic axis orientation

The results of an experiment on 1200 MeV electrons passing through a thin ( 10 mu m) Si monocrystal cut along the (1 1 1) plane of a crystal are presen ted. The angular distributions of the scattered electrons and the orientati on dependencies of electron transmission and scattering to small solid angl e in the defined direction are measured. The theoretical calculation of ele ctron transmission is carried out taking into account the azimuthal scatter ing only, and taking into account also the polar angle scattering. It is sh own that taking into account polar angle scattering, which is connected wit h the initial distribution of impact parameters, leads to a significant red uction of the discrepancy between the results of calculation and the experi mental data. (C) 2000 Published by Elsevier Science B.V. All rights reserve d.