A survey is presented of current investigations of the impact of band struc
ture effects on various aspects of the interaction of charged particles wit
h real solids. The role that interband transitions play in the decay mechan
ism of bulk plasmons is addressed, and results for plasmon linewidths in Al
and Si are discussed. Ab initio calculations of the electronic energy loss
of ions moving in Al and Si are also presented, within linear response the
ory, from a realistic description of the one-electron band structure and a
full treatment of the dynamic electronic response of valence electrons. Bot
h random and position-dependent stopping powers of valence electrons are co
mputed. (C) 2000 Elsevier Science B.V. All rights reserved.